ZnGeP2 — An Saturated Infrared Nonlinear Optics

Short Description:

Due to possessing large nonlinear coefficients (d36=75pm/V), wide infrared transparency range(0.75-12μm), high thermal conductivity(0.35W/(cm·K)), high laser damage threshold (2-5J/cm2)and well machining property, ZnGeP2 was called the king of infrared nonlinear optics and is still the best frequency conversion material for high power, tunable infrared laser generation. 

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Product Description

Due to these unique properties, it is known as one of the most promising materials for nonlinear optical applications. ZnGeP2 can generate 3–5 μm continuous tunable laser out put through the optical parametric oscillation (OPO) technology. Lasers, operating in the atmospheric transmission window of 3–5 μm are of great importance for many applications, such as infrared counter measure, chemical monitoring, medical apparatus, and remote sensing.

We can offer high optical quality ZnGeP2 with extremely low absorption coefficient α < 0.05 cm-1(at pump wavelengths 2.0-2.1 µm), which can be used to generate mid-infrared tunable laser with high efficiency through OPO or OPA processes.

Our Capacity

Dynamic Temperature Field Technology was created and applied to synthesize ZnGeP2 polycrystalline. Through this technology, more than 500g high purity ZnGeP2 polycrystalline with huge grains has been synthesized in one run.
Horizontal Gradient Freeze method combined with Directional Necking Technology (which can lower the dislocation density efficiently) has been successfully applied to the growth of high quality ZnGeP2.
The kilogram-level high-quality ZnGeP2 with the world's largest diameter (Φ55 mm) has been successfully grown by Vertical Gradient Freeze method.
The surface roughness and flatness of the crystal devices, less than 5Å and 1/8λ respectively, have been obtained by our trap fine surface treatment technology.
The final angle deviation of the crystal devices is less than 0.1 degree due to the application of precise orientation and precise cutting techniques.
The devices with excellent performance have been achieved because of the high quality of the crystals and high-level crystal processing technology (The 3-5μm mid-infrared tunable laser has been generated with the conversion efficiency greater than 56% when pumped by a 2μm light source).
Our research group, through continuous exploration and technical innovation, has successfully mastered the synthesis technology of high-purity ZnGeP2 polycrystalline, the growth technology of large size and high quality ZnGeP2 and crystal orientation and high-precision processing technology; can provide ZnGeP2 devices and original as-grown crystals in mass scale with high uniformity, low absorption coefficient, good stability, and high conversion efficiency. At the same time, we have established a whole set of crystal performance testing platform which makes us have the ability to provide crystal performance testing services for customers. 


● Second, third, and fourth harmonic generation of CO2-laser
● Optical parametric generation with pumping at a wavelength of 2.0 µm
● Second harmonic generation of CO-laser
● Producing coherent radiation in submillimeterrange from 70.0 µm to 1000 µm
● Generation of combined frequencies of CO2- and CO-lasers radiation and other lasers are working in the crystal transparency region.

Basic Properties

Chemical ZnGeP2
Crystal Symmetry and Class tetragonal, -42m
Lattice Parameters    a =  5.467 Å
c = 12.736 Å
Density 4.162  g/cm3
Mohs Hardness 5.5
Optical Class Positive uniaxial
Userful Transmission Range 2.0 um - 10.0 um
Thermal Conductivity
@ T= 293 K
35 W/m∙K (⊥c)
36 W/m∙K ( ∥ c)
Thermal Expansion
@ T = 293 K to 573 K
17.5 x 106 K-1 (⊥c)
15.9 x 106 K-1 ( ∥ c)

Technical Parameters

Diameter Tolerance +0/-0.1 mm
Length Tolerance ±0.1 mm
Orientation Tolerance <30 arcmin
Surface Quality 20-10 S-D
Flatness <λ/4@632.8 nm
Parallelism <30 arcsec
Perpendicularity <5 arcmin
Chamfer <0.1 mm x 45°
Transparency range 0.75 - 12.0 ?m
Nonlinear Coefficients d36 = 68.9 pm/V (at 10.6μm)
d36 = 75.0 pm/V (at 9.6 μm)
Damage Threshold 60 MW/cm2 ,150ns@10.6μm

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