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AgGaSe2 Crystals — Band Edges At 0.73 And 18 µm

Short Description:

AGSe2 AgGaSe2(AgGa(1-x)InxSe2) crystals have band edges at 0.73 and 18 µm. Its useful transmission range (0.9–16 µm) and wide phase matching capability provide excellent potential for OPO applications when pumped by a variety of different lasers.


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Product Description

Tuning within 2.5–12 µm has been obtained when pumping by Ho:YLF laser at 2.05 µm; as well as non-critical phase matching (NCPM) operation within 1.9–5.5 µm  when pumping at 1.4–1.55 µm. AgGaSe2 (AgGaSe) has been demonstrated to be an efficient frequency doubling crystal for infrared CO2 lasers radiation.
By working in combination with commercially available synchronously-pumped optical parametric oscillators (SPOPOs) in the femtosecond and picosecond regime, AgGaSe2 crystals have shown to be effective in nonlinear parametric downconversion (difference frequency generation, DGF) in the Mid-IR region. The mid-IR nonlinear AgGaSe2 crystal possesses one of the greatest figures of merit (70 pm2/V2) among commercially accessible crystals, which is six times more than the AGS equivalent. AgGaSe2 is also preferable to other mid-IR crystals for a number of specific reasons. AgGaSe2, for instance, has lower spatial walk-off and is less readily available to be treated for specific applications (growth and cut direction, for example), although having larger nonlinearity and equivalent transparency area.

Applications

● Generation second harmonics on CO and CO2 - lasers
● Optical parametric oscilator
● Different frequency generator to middle infrared regions up to 17 mkm.
● Frequency mixing in the middle IR region

Basic Properties

Crystal Structure Tetragonal
Cell Parameters a=5.992 Å, c=10.886 Å
Melting Point 851 °C
Density 5.700 g/cm3
Mohs Hardness 3-3.5
Absorption Coefficient <0.05 cm-1 @ 1.064 µm
<0.02 cm-1 @ 10.6 µm
Relative Dielectric Constant
@ 25 MHz
ε11s=10.5
ε11t=12.0
Thermal Expansion
Coefficient
||C: -8.1 x 10-6 /°C
⊥C: +19.8 x 10-6 /°C
Thermal Conductivity 1.0 W/M/°C

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